Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2018.2870721
Title: Ultra-Thin GaAs Double-Junction Solar Cell With Carbon-Doped Emitter
Authors: Ren, Zekun 
Thway, Maung 
Liu, Zhe 
Wang, Yue 
Ke, Cangming 
Yaung, Kevin N
Wang, Bing
Tan, Chuan Seng 
Lin, Fen 
Aberle, Armin G 
Buonassisi, Tonio
Peters, Ian Marius 
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
One sun tandem solar cell
Ultra-thin GaAs
III-V on Si
III-V tandem
MOLECULAR-BEAM EPITAXY
SURFACE-MORPHOLOGY
DISLOCATIONS
EFFICIENCY
TANDEM
INDIUM
ZINC
Issue Date: 1-Nov-2018
Publisher: IEEE Electron Devices Society
Citation: Ren, Zekun, Thway, Maung, Liu, Zhe, Wang, Yue, Ke, Cangming, Yaung, Kevin N, Wang, Bing, Tan, Chuan Seng, Lin, Fen, Aberle, Armin G, Buonassisi, Tonio, Peters, Ian Marius (2018-11-01). Ultra-Thin GaAs Double-Junction Solar Cell With Carbon-Doped Emitter. IEEE JOURNAL OF PHOTOVOLTAICS 8 (6) : 1627-1634. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2018.2870721
Abstract: © 2018 IEEE. We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this architecture are improved by replacing the zinc doping in the emitter of the top cell with carbon doping. We find that the carbon doping results in a well-defined active junction profile that agrees well with the secondary ion mass spectroscopy measurement. Additionally, we find that the carbon doping coincides with the incorporation of indium in the emitter. We postulate that the incorporation of indium relieves stress in the material, which results in a smoother morphology of the GaAs film. Finally, we show the efficiency achieved with the carbon-doping process is 19.2% for the GaAs/GaAs dual junction cell. The open circuit voltage is 1.087 V for the ultra-thin (110 nm) GaAs top cell and 2.08 V for the dual junction cell.
Source Title: IEEE JOURNAL OF PHOTOVOLTAICS
URI: https://scholarbank.nus.edu.sg/handle/10635/176902
ISSN: 21563381
21563403
DOI: 10.1109/JPHOTOV.2018.2870721
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