Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacks

Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.10NA17

Title:	Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacks
Authors:	Lin, F. Duttagupta, S. Shetty, K.D. Boreland, M. Aberle, A.G. Hoex, B.
Issue Date:	Oct-2012
Citation:	Lin, F., Duttagupta, S., Shetty, K.D., Boreland, M., Aberle, A.G., Hoex, B. (2012-10). Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacks. Japanese Journal of Applied Physics 51 (10 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.10NA17
Abstract:	Excellent surface passivation of boron emitters is demonstrated for industrial plasma-enhanced chemical vapor deposited (PECVD) SiO x /AlO x stacks. Emitter saturation current densities of 39 and 34 fA/cm2, respectively, were achieved at 300 K on 80Ω/sq boron emitters after activation by (i) a standard industrial firing process and (ii) a forming gas anneal followed by industrial firing. We find that the surface passivation by SiO x / AlO x stack can be effectively controlled by varying the SiO x layer thickness. This stack is directly applicable to certain high-efficiency solar cell structures, by optimising the SiO x thickness accordingly. © 2012 The Japan Society of Applied Physics.
Source Title:	Japanese Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82312
ISSN:	00214922
DOI:	10.1143/JJAP.51.10NA17
Appears in Collections:	Staff Publications

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