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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 221-240 of 300 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
221Jul-2000Novel voltage-tunable, low-voltage linear CMOS transconductorLai, W.H.; Zhang, X.W.; Li, M.-F. 
2221995Observation of carrier concentration saturation effect in n-type AlxGa1-xAsDu, A.Y.; Li, M.F. ; Chong, T.C. ; Chua, S.J. 
32007On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectricLiu, W.J.; Liu, Z.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Shen, C.; Li, M.-F. 
4May-1996Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laserFan, W.J.; Li, M.F. ; Chong, T.C. ; Xia, J.B.
5Aug-2007P-Type floating gate for retention and P/E window improvement of flash memory devicesShen, C.; Pu, J. ; Li, M.-F. ; Cho, B.J. 
6Jul-1998Phonon-assisted photoluminescence in wurtzite GaN epilayerLiu, W.; Li, M.F. ; Xu, S.J.; Uchida, K.; Matsumoto, K.
7Jul-1998Phonon-assisted photoluminescence in wurtzite GaN epilayerLiu, W.; Li, M.F. ; Xu, S.J.; Uchida, K.; Matsumoto, K.
8Apr-1999Photoreflectance study of Au-Schottky contacts on n-GaNLiu, W.; Li, M.-F. ; Chua, S.-J. ; Akutsu, N.; Matsumoto, K.
9May-1999Photoreflectance study on the surface states of n-type GaNLiu, W.; Li, M.F. ; Chua, S.J. ; Akutsu, N.; Matsumoto, K.
10Jul-1999Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structuresLiu, W.; Li, M.F. ; Teo, K.L. ; Akutsu, N.; Matsumoto, K.
11Jul-1999Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structuresLiu, W.; Li, M.F. ; Teo, K.L. ; Akutsu, N.; Matsumoto, K.
12Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
13Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
141-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1515-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
1628-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
171999Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structureHou, Yong Tian ; Teo, Kie Leong ; Li, Ming Fu ; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh
181999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
191-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
20Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.