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|Title:||Photoreflectance study of Au-Schottky contacts on n-GaN||Authors:||Liu, W.
|Issue Date:||Apr-1999||Citation:||Liu, W.,Li, M.-F.,Chua, S.-J.,Akutsu, N.,Matsumoto, K. (1999-04). Photoreflectance study of Au-Schottky contacts on n-GaN. Journal of Electronic Materials 28 (4) : 360-363. ScholarBank@NUS Repository.||Abstract:||Semi-transparent Au-Schottky contacts on n-GaN were fabricated and studied by room-temperature photoreflectance spectroscopy. A significant difference was observed in the photoreflectance spectra before and after the evaporation of Au-Schottky contacts. This can be interpreted due to the formation of Schottky barrier at the interface between Au and GaN. Furthermore, for the higher doping sample, Franz-Keldysh oscillations were observed in the photoreflectance, which allowed the accurate determination of Au-Schottky barrier height on GaN.||Source Title:||Journal of Electronic Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/62617||ISSN:||03615235|
|Appears in Collections:||Staff Publications|
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