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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Balasubramanian, N.
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 42 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
120085 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation techniqueLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2200650 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride linerAng, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
32006A CMOS compatible smart power synchronous rectifierLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
4Sep-2004A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performanceJagar, S.; Singh, N.; Mehta, S.S.; Agrawal, N.; Samudra, G. ; Balasubramanian, N.
5Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
62007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
72008A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancementLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Tan, B.L.H.; Tripathy, S.; Oh, S.-A.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
82005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
92010A smart-power synchronous rectifier by CMOS processLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
102007Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETsAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
112006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
122007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
132004Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regionsAng, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
142007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
15Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
162005Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystalsSamanta, S.K. ; Singh, P.K.; Yoo, W.J. ; Samudra, G. ; Yeo, Y.-C. ; Bera, L.K.; Balasubramanian, N.
1724-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
182007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
19Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2028-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C.