1. ScholarBank@NUS

Samudra,Ganesh S

rp00141

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Type:  Article

Results 121-140 of 150 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
121Dec-1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
122Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
123Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
124Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C. 
125Oct-2007Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1262008Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressorsMadan, A.; Samudra, G. ; Yeo, Y.-C. 
12725-Apr-2008Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technologyWang, G.H.; Toh, E.-H.; Wang, X.; Hoe, K.-M.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
1282010Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancementKoh, S.-M.; Wong, H.-S.; Gong, X.; Ng, C.-M.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
1292008Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
130Jul-2007Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structureAng, K.-W.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
131Mar-2008Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performanceAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
132Oct-2007Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1332007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
13424-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
135Jan-2008Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressorsWang, G.H.; Toh, E.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
136Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
137Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
138Aug-2007Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
13924-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
140May-2002Supply-voltage optimization for below-70-nm technology-node MOSFETsWakabayashi, H.; Samudra, G.S. ; Djomehri, I.J.; Nayfeh, H.; Antoniadis, D.A.