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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

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Author:  Samudra, G.
Department:  ou02442

Results 121-140 of 200 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1212004Optimal power converter topology for powering future microprocessor demandsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
122Aug-2001Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devicesLiang, Y.C. ; Gan, K.P.; Samudra, G.S. 
1232008P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swingToh, E.-H.; Wang, G.H.; Weeks, D.; Zhu, M. ; Bauer, M.; Spear, J.; Chan, L.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
124May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1252009Partial SOI superjunction power LDMOS for PIC applicationChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
126Nov-2007Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1272007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1282008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
1292015Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTsChang, T.-F.; Hsiao, T.-C.; Huang, C.-F.; Kuo, W.-H.; Lin, S.-F.; Samudra, G.S. ; Liang Y.C. 
1302001Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devicesGan, K.P.; Liang, Y.C. ; Samudra, G.S. ; Xu, S.M.; Yong, L.
1318-Feb-2005Power MOSFET having enhanced breakdown voltageLIANG, YUNG CHII ; SAMUDRA, GANESH SHANKAR ; GAN, KIAN PAAU; YANG, XIN 
132Aug-2004Practical superjuction MOSFET device performance under given process thermal cyclesZhong, H.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.
1332007Probing the ErSi1.7 Phase formation by micro-Raman spectroscopyLee, R.T.-P. ; Tan, K.-M.; Liow, T.-Y.; Ho, C.-S.; Tripathy, S.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1342006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1352007Progression of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.
136Jan-2008Progressive development of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.; Buddharaju, K.D.; Feng, H.
137May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
1382007Realistic simulation of reverse characteristics of 4H-SIC power DiodeWei, G.; Liang, Y.C. ; Samudra, G.S. 
1392011Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devicesWei, G.; Liang, Y.C. ; Samudra, G.S. 
140Jan-2012Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devicesWei, G.; Liang, Y.C. ; Samudra, G.S.