Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.936359
Title: Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices
Authors: Liang, Y.C. 
Gan, K.P.
Samudra, G.S. 
Keywords: Ideal silicon MOSFET limit
Superjunction devices
VDMOS power devices
Issue Date: Aug-2001
Citation: Liang, Y.C., Gan, K.P., Samudra, G.S. (2001-08). Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices. IEEE Electron Device Letters 22 (8) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/55.936359
Abstract: Superjunction concept had been proposed to overcome ideal silicon MOSFET limit, but its fabrication was handicapped by the precise charge balance requirement and inter-diffusion problem. We report a novel device structure termed oxide-bypassed VDMOS (OBVDMOS) that requires the well-established oxide thickness control instead of the difficult doping control in translating the limit to a higher blocking voltage. This is done by using metal-thick-oxide (MTO) at the sidewalls of drift region. One can choose to have a higher blocking voltage or increase the background doping. A PiN structure, essentially identical to MOSFET during off state, was fabricated to demonstrate the proposed concept. Its measured BV dss of 170 V is 2.5 times higher than measured conventional device BV dss of 67 V on the same silicon wafer.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82857
ISSN: 07413106
DOI: 10.1109/55.936359
Appears in Collections:Staff Publications

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