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|Title:||Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices||Authors:||Wei, G.
|Keywords:||High voltage p-n junction
SiC/GaN diode simulation
WBG power semiconductor
|Issue Date:||2011||Citation:||Wei, G.,Liang, Y.C.,Samudra, G.S. (2011). Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices. 8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia : 1464-1468. ScholarBank@NUS Repository. https://doi.org/10.1109/ICPE.2011.5944472||Abstract:||This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC/GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others. © 2011 IEEE.||Source Title:||8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia||URI:||http://scholarbank.nus.edu.sg/handle/10635/71559||ISBN:||9781612849560||DOI:||10.1109/ICPE.2011.5944472|
|Appears in Collections:||Staff Publications|
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