Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2352276

Title:	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
Authors:	Chang, T.-F. Hsiao, T.-C. Huang, C.-F. Kuo, W.-H. Lin, S.-F. Samudra, G.S. Liang Y.C.
Issue Date:	2015
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Citation:	Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C. (2015). Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 62 (2) : 339-345. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2352276
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/127347
ISSN:	189383
DOI:	10.1109/TED.2014.2352276
Appears in Collections:	Staff Publications

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