Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2352276
Title: Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
Authors: Chang, T.-F.
Hsiao, T.-C.
Huang, C.-F.
Kuo, W.-H.
Lin, S.-F.
Samudra, G.S. 
Liang Y.C. 
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C. (2015). Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 62 (2) : 339-345. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2352276
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/127347
ISSN: 189383
DOI: 10.1109/TED.2014.2352276
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