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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Pey, K.L.
Type:  Article

Results 1-16 of 16 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12009Arrayed sisige nanowire and heterostructure formations via au-assisted wet chemical etching methodWang, X.; Pey, K.L.; Choi, W.K. ; Ho, C.K.F.; Fitzgerald, E.; Antoniadis, D.
231-Dec-2001Effect of current direction on the lifetime of different levels of Cu dual-damascene metallizationGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
31-Aug-2005Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicideJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Rahman, Md.A.; Osipowicz, T. ; Tung, C.H.
42007Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnectsChang, C.W.; Thompson, C.V.; Gan, C.L.; Pey, K.L.; Choi, W.K. ; Lim, Y.K.
51-May-2006Electromigration resistance in a short three-contact interconnect treeChang, C.W.; Choi, Z.-S.; Thompson, C.V.; Gan, C.L.; Pey, K.L.; Choi, W.K. ; Hwang, N.
615-Jul-2003Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L.; Choi, W.K. 
715-May-2005Highly oriented Ni(Pd)SiGe formation at 400 °cJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Tung, C.H.
81-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
9Nov-2001N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVDTan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K.
10Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
111-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
121-Jun-2000Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy filmsChoi, W.K. ; Bera, L.K. ; Chen, J.H. ; Feng, W.; Pey, K.L. ; Yoong, H.; Mi, J.; Zhang, F.; Yang, C.Y.
13Dec-2007The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2Yu, H.P.; Pey, K.L.; Choi, W.K. ; Dawood, M.K.; Chew, H.G.; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
14Sep-2004The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °CJin, L.J.; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Tung, C.H.
15Nov-2002Thermal reaction of nickel and Si0.75Ge0.25 alloyPey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Zhao, H.B.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
162006Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.; Tung, C.H.