Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.1507339
Title: | Thermal reaction of nickel and Si0.75Ge0.25 alloy | Authors: | Pey, K.L. Choi, W.K. Chattopadhyay, S. Zhao, H.B. Fitzgerald, E.A. Antoniadis, D.A. Lee, P.S. |
Issue Date: | Nov-2002 | Citation: | Pey, K.L., Choi, W.K., Chattopadhyay, S., Zhao, H.B., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-11). Thermal reaction of nickel and Si0.75Ge0.25 alloy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 20 (6) : 1903-1910. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1507339 | Abstract: | Thermal reactions of nickel and Si0.75Ge0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C. | Source Title: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/83191 | ISSN: | 07342101 | DOI: | 10.1116/1.1507339 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
51
checked on Mar 4, 2021
WEB OF SCIENCETM
Citations
48
checked on Feb 25, 2021
Page view(s)
65
checked on Mar 1, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.