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|Title:||The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2||Authors:||Yu, H.P.
Ni germanide (NiGe)
|Issue Date:||Dec-2007||Citation:||Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2007-12). The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2. IEEE Electron Device Letters 28 (12) : 1098-1101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.909999||Abstract:||In this letter, the tuning of a nickel fully germanided metal gate effective workfunction via a hyperthin yttrium (Y) interlayer at the bottom of the metal electrode was demonstrated on both SiO2 and HfO2. By varying the Y interlayer thickness from 0 to 9.6 nm, a full range of workfunction tuning from 5.11 to 3.65 eV has been achieved on NiGeY/SiO2 stacks. It was also found that the chemical potential of the material that is adjacent to the gate electrode/gate insulator plays an important role in the determination of the effective workfunction. This workfunction tuning window was observed to decrease to a range of 5.08-4.25 eV on NiGeY/HfO2 stacks. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83160||ISSN:||07413106||DOI:||10.1109/LED.2007.909999|
|Appears in Collections:||Staff Publications|
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