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|Title:||Electromigration resistance in a short three-contact interconnect tree||Authors:||Chang, C.W.
|Issue Date:||1-May-2006||Citation:||Chang, C.W., Choi, Z.-S., Thompson, C.V., Gan, C.L., Pey, K.L., Choi, W.K., Hwang, N. (2006-05-01). Electromigration resistance in a short three-contact interconnect tree. Journal of Applied Physics 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2196114||Abstract:||Electromigration has been characterized in via-terminated interconnect lines with additional vias in the middle, creating two adjacent segments that can be stressed independently. The mortality of a segment was found to depend on the direction and magnitude of the current in the adjacent segment, confirming that there is not a fixed value of the product of the current density and segment length, jL, that defines immortality in individual segments that are part of a multisegment interconnect tree. Instead, it is found that the probability of failure of a multisegment tree increases with the increasing value of an effective jL product defined in earlier work. However, contrary to expectations, the failures were still observed when (jL)eff was less than the critical jL product for which lines were found to be immortal in single-segment test structures. It is argued that this is due to reservoir effects associated with unstressed segments or due to liner failure at the central via. Multisegment test structures are therefore shown to reveal more types of failure mechanisms and mortality conditions that are not found in tests with single-segment structures. © 2006 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/55850||ISSN:||00218979||DOI:||10.1063/1.2196114|
|Appears in Collections:||Staff Publications|
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