ELECTRICAL AND COMPUTER ENGINEERING

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	Issue Date	Title	Author(s)
2281	1986	SIMPLE FAST ADAPTIVE ARRAY BASED ON A NULL STEERING BEAMFORMER.	Ko, C.C. ; Lim, Y.C. ; Ngan, K.N.
2282	2006	Simple fabrication of a ZnO nanowire photodetector with a fast photoresponse time	Law, J.B.K.; Thong, J.T.L.
2283	2-Feb-2006	Simple error probability derivation for binary DPSK over fast Rician channels with diversity	Fu, H. ; Kam, P.Y.
2284	2006	Simple directional antennas: Improving performance in wireless multihop networks	Yap, K.-K.; Yeow, W.-L.; Motani, M. ; Tham, C.-K.
5	1-Aug-2006	Simple autocorrelation technique based on degree-of-polarization measurement	Luo, T.; Yu, C. ; Yan, L.-S.; Kumar, S.; Pan, Z.; Willner, A.E.
6	2007	Simple analytical models to predict conducted EMI noise in a power electronic converter	Mainali, K.; Oruganti, R.
7	Jan-1995	Simple algorithm for the stable/unstable decomposition of a linear discrete-time system	Chen, Ben M.
8	Nov-2020	SIMBA: A Skyrmionic In-Memory Binary Neural Network Accelerator	Miriyala, Venkata Pavan Kumar ; Vishwanath, Kale Rahul ; Fong, Xuanyao
9	15-Sep-2020	SIMBA: A Skyrmionic In-Memory Binary Neural Network Accelerator	Venkata Pavan Kumar Miriyala ; Kale Rahul Vishwanath ; Xuanyao Fong
10	2009	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage	Koh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C.
11	2007	Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs	Wang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T.; Chan, T.K.; Hoe, K.M.; Balakumar, S.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.
12	May-2008	Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors	Wong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C.
13	2006	Silicon-carbon source/drain: Selective epitaxy, process integration, and transistor strain engineering	Yeo, Y.-C.
14	2012	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation	Zhou, Q. ; Koh, S.-M.; Tong, Y.; Henry, T.; Erokhin, Y.; Yeo, Y.-C.
15	2009	Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs	Koh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C.
16	11-Apr-2011	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate	Han, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C.
17	2011	Silicon waveguide integrated germanium JFET photodetector with improved speed performance	Wang, J. ; Yu, M.; Lo, G.; Kwong, D.-L.; Lee, S.
18	2010	Silicon vertical-nano-wire based photovaltaic device	Wang, J. ; Li, Z.H.; Singh, N.; Lo, G.Q.; Lee, S.J.
19	5-Dec-2011	Silicon two-dimensional phononic crystal resonators using alternate defects	Wang, N.; Hsiao, F.-L. ; Palaniapan, M. ; Lee, C.
20	Oct-1986	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.	Ling, C.H. ; Kwok, C.Y.; Prasad, K.