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https://doi.org/10.1109/IPECON.2010.5697114
Title: | Silicon vertical-nano-wire based photovaltaic device | Authors: | Wang, J. Li, Z.H. Singh, N. Lo, G.Q. Lee, S.J. |
Keywords: | Silicon vertical nanowire Solar cell |
Issue Date: | 2010 | Citation: | Wang, J.,Li, Z.H.,Singh, N.,Lo, G.Q.,Lee, S.J. (2010). Silicon vertical-nano-wire based photovaltaic device. 2010 9th International Power and Energy Conference, IPEC 2010 : 247-249. ScholarBank@NUS Repository. https://doi.org/10.1109/IPECON.2010.5697114 | Abstract: | High efficiency nanowire based solar cell is realized on single-crystalline Si substrate using standard CMOS processes. High short-circuit current of 22.5mA/cm2 and power conversion efficiency of ∼7.5% is demonstrated with reflectivity of the nanowire surface as low as ∼8%. ©2010 IEEE. | Source Title: | 2010 9th International Power and Energy Conference, IPEC 2010 | URI: | http://scholarbank.nus.edu.sg/handle/10635/84180 | ISBN: | 9781424473991 | DOI: | 10.1109/IPECON.2010.5697114 |
Appears in Collections: | Staff Publications |
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