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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPECON.2010.5697114
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dc.titleSilicon vertical-nano-wire based photovaltaic device
dc.contributor.authorWang, J.
dc.contributor.authorLi, Z.H.
dc.contributor.authorSingh, N.
dc.contributor.authorLo, G.Q.
dc.contributor.authorLee, S.J.
dc.date.accessioned2014-10-07T04:49:43Z
dc.date.available2014-10-07T04:49:43Z
dc.date.issued2010
dc.identifier.citationWang, J.,Li, Z.H.,Singh, N.,Lo, G.Q.,Lee, S.J. (2010). Silicon vertical-nano-wire based photovaltaic device. 2010 9th International Power and Energy Conference, IPEC 2010 : 247-249. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPECON.2010.5697114" target="_blank">https://doi.org/10.1109/IPECON.2010.5697114</a>
dc.identifier.isbn9781424473991
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84180
dc.description.abstractHigh efficiency nanowire based solar cell is realized on single-crystalline Si substrate using standard CMOS processes. High short-circuit current of 22.5mA/cm2 and power conversion efficiency of ∼7.5% is demonstrated with reflectivity of the nanowire surface as low as ∼8%. ©2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPECON.2010.5697114
dc.sourceScopus
dc.subjectSilicon vertical nanowire
dc.subjectSolar cell
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/IPECON.2010.5697114
dc.description.sourcetitle2010 9th International Power and Energy Conference, IPEC 2010
dc.description.page247-249
dc.identifier.isiutNOT_IN_WOS
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