Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPECON.2010.5697114
Title: Silicon vertical-nano-wire based photovaltaic device
Authors: Wang, J. 
Li, Z.H.
Singh, N.
Lo, G.Q.
Lee, S.J. 
Keywords: Silicon vertical nanowire
Solar cell
Issue Date: 2010
Source: Wang, J.,Li, Z.H.,Singh, N.,Lo, G.Q.,Lee, S.J. (2010). Silicon vertical-nano-wire based photovaltaic device. 2010 9th International Power and Energy Conference, IPEC 2010 : 247-249. ScholarBank@NUS Repository. https://doi.org/10.1109/IPECON.2010.5697114
Abstract: High efficiency nanowire based solar cell is realized on single-crystalline Si substrate using standard CMOS processes. High short-circuit current of 22.5mA/cm2 and power conversion efficiency of ∼7.5% is demonstrated with reflectivity of the nanowire surface as low as ∼8%. ©2010 IEEE.
Source Title: 2010 9th International Power and Energy Conference, IPEC 2010
URI: http://scholarbank.nus.edu.sg/handle/10635/84180
ISBN: 9781424473991
DOI: 10.1109/IPECON.2010.5697114
Appears in Collections:Staff Publications

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