Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3665956
Title: Silicon two-dimensional phononic crystal resonators using alternate defects
Authors: Wang, N.
Hsiao, F.-L. 
Palaniapan, M. 
Lee, C. 
Issue Date: 5-Dec-2011
Citation: Wang, N., Hsiao, F.-L., Palaniapan, M., Lee, C. (2011-12-05). Silicon two-dimensional phononic crystal resonators using alternate defects. Applied Physics Letters 99 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3665956
Abstract: We present the numerical and experimental investigations of micromechanical resonators made by creating alternate defects with different central-hole radii (r′) in a two-dimensional (2-D) phononic crystal (PnC) slab. The PnC structures were fabricated by etching a square array of cylindrical air holes in a 10 m thick free-standing silicon plate using a CMOS-compatible process. Preliminary experimental results show that the performance of the PnC resonators in terms of resonant frequency, Q factor, and insertion loss (IL) is highly dependent on r′. A Q factor of more than 3000 is achieved for the case of r′ 6 m while all the designed resonators with alternate defects have higher Q factor and lower IL than the resonators based on the normal Fabry-Perot structure due to the reduction in the mode mismatch. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57399
ISSN: 00036951
DOI: 10.1063/1.3665956
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