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https://doi.org/10.1109/LPT.2011.2132794
| Title: | Silicon waveguide integrated germanium JFET photodetector with improved speed performance | Authors: | Wang, J. Yu, M. Lo, G. Kwong, D.-L. Lee, S. |
Keywords: | Germanium junction field-effect-transistor (JFET) photodetector |
Issue Date: | 2011 | Citation: | Wang, J., Yu, M., Lo, G., Kwong, D.-L., Lee, S. (2011). Silicon waveguide integrated germanium JFET photodetector with improved speed performance. IEEE Photonics Technology Letters 23 (12) : 765-767. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2011.2132794 | Abstract: | This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down. © 2010 IEEE. | Source Title: | IEEE Photonics Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/57400 | ISSN: | 10411135 | DOI: | 10.1109/LPT.2011.2132794 |
| Appears in Collections: | Staff Publications |
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