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|Title:||Silicon waveguide integrated germanium JFET photodetector with improved speed performance||Authors:||Wang, J.
junction field-effect-transistor (JFET)
|Issue Date:||2011||Citation:||Wang, J., Yu, M., Lo, G., Kwong, D.-L., Lee, S. (2011). Silicon waveguide integrated germanium JFET photodetector with improved speed performance. IEEE Photonics Technology Letters 23 (12) : 765-767. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2011.2132794||Abstract:||This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down. © 2010 IEEE.||Source Title:||IEEE Photonics Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57400||ISSN:||10411135||DOI:||10.1109/LPT.2011.2132794|
|Appears in Collections:||Staff Publications|
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