Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2011.2132794
DC FieldValue
dc.titleSilicon waveguide integrated germanium JFET photodetector with improved speed performance
dc.contributor.authorWang, J.
dc.contributor.authorYu, M.
dc.contributor.authorLo, G.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorLee, S.
dc.date.accessioned2014-06-17T03:05:46Z
dc.date.available2014-06-17T03:05:46Z
dc.date.issued2011
dc.identifier.citationWang, J., Yu, M., Lo, G., Kwong, D.-L., Lee, S. (2011). Silicon waveguide integrated germanium JFET photodetector with improved speed performance. IEEE Photonics Technology Letters 23 (12) : 765-767. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2011.2132794
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57400
dc.description.abstractThis letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LPT.2011.2132794
dc.sourceScopus
dc.subjectGermanium
dc.subjectjunction field-effect-transistor (JFET)
dc.subjectphotodetector
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/LPT.2011.2132794
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume23
dc.description.issue12
dc.description.page765-767
dc.description.codenIPTLE
dc.identifier.isiut000290735800003
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