Please use this identifier to cite or link to this item:
|Title:||Silicon waveguide integrated germanium JFET photodetector with improved speed performance|
|Authors:||Wang, J. |
junction field-effect-transistor (JFET)
|Citation:||Wang, J., Yu, M., Lo, G., Kwong, D.-L., Lee, S. (2011). Silicon waveguide integrated germanium JFET photodetector with improved speed performance. IEEE Photonics Technology Letters 23 (12) : 765-767. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2011.2132794|
|Abstract:||This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down. © 2010 IEEE.|
|Source Title:||IEEE Photonics Technology Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 18, 2018
WEB OF SCIENCETM
checked on Jul 25, 2018
checked on Aug 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.