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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Date Issued:  [2010 TO 2019]

Results 1-20 of 108 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Mar-2011A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integrationTran, X.A.; Yu, H.Y.; Yeo, Y.C. ; Wu, L.; Liu, W.J.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Li, M.F.
2Mar-2011A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.-T.; Samudra, G. ; Yeo, Y.-C. 
32012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
42012A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architectureTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
5Apr-2012A self-rectifying HfO x-based unipolar RRAM with Nisi electrodeTran, X.A.; Zhu, W.G.; Gao, B.; Kang, J.F.; Liu, W.J.; Fang, Z.; Wang, Z.R.; Yeo, Y.C. ; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
6Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
713-Jan-2014Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxyRichard D'Costa, V.; Wang, W.; Zhou, Q. ; Soon Tok, E. ; Yeo, Y.-C. 
8Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
92017Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integrationHolland, M; Van Dal, M; Duriez, B; Oxland, R; Vellianitis, G; Doornbos, G; Afzalian, A; Chen, T.-K; Hsieh, C.-H; Ramvall, P; Vasen, T; Yeo, Y.-C ; Passlack, M
102014Ballistic transport performance of silicane and germanane transistorsLow, K.L.; Huang, W.; Yeo, Y.-C. ; Liang, G. 
1115-Jul-2013Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, M.H.S.; Guo, C.; Chen, S.-H.; Wan, C.-T.; Cheng, C.-C.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.; Ivana; Zhang, Z.; Pan, J.S.; Yeo, Y.-C. 
1228-Mar-2011Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary systemFang, L.W.-W.; Zhao, R.; Zhang, Z.; Pan, J.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
1322-Jun-2012Breaking the speed limits of phase-change memoryLoke, D.; Lee, T.H.; Wang, W.J.; Shi, L.P.; Zhao, R.; Yeo, Y.C. ; Chong, T.C.; Elliott, S.R.
1419-Jul-2010Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressorsKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
152010Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressorCheng, R. ; Liu, B.; Yeo, Y.-C. 
1615-Feb-2012Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrateXu, Z.; Yoon, S.F.; Yeo, Y.C. ; Chia, C.K.; Cheng, Y.B.; Dalapati, G.K.
172013Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineeringZhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
18Jun-2010Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drainSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
19Apr-2012Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregationKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
20Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C.