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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1996 TO 1999]

Results 1-20 of 26 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
11998A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETsAng, D.S. ; Ling, C.H. 
215-May-1998A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiationCheng, Z.Y. ; Ling, C.H. 
31999A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 KLing, C.H. ; See, L.K.
4Jun-1997A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurementAng, D.S. ; Ling, C.H. 
5Mar-1999A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET'sAng, D.S. ; Ling, C.H. 
6Jan-1998A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sAng, D.S. ; Ling, C.H. 
71998A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET'sAng, D.S. ; Ling, C.H. 
81-Dec-1997An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurementsLing, C.H. ; Cheng, Z.Y. 
91998Charge trapping in interpoly ONO filmLira, K.S.; Ling, C.H. 
101997Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET'sLing, C.H. 
111997Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitorsOoi, J.A.; Ling, C.H. 
121997Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET'sGoh, Y.H.; Ah, L.K.; Ling, C.H. 
13May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
141-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
151996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
1615-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
171997Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping currentLing, C.H. ; Goh, Y.H.; Ooi, J.A.
181997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
191997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
20Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H.