A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.650342

Title:	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
Authors:	Ang, D.S. Ling, C.H.
Keywords:	Charge pumping current Gate-to-drain capacitance Hot-carrier degradation Lateral profilig of trapped charges MOSFET's
Issue Date:	Jan-1998
Citation:	Ang, D.S., Ling, C.H. (1998-01). A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's. IEEE Electron Device Letters 19 (1) : 23-25. ScholarBank@NUS Repository. https://doi.org/10.1109/55.650342
Abstract:	A new experimental techique, based on gate-to-drain capacitance Cgd s and charge pumping (CP) current, is proposed for the lateral profiling of oxide and interface state charges in the LDD region of the n-MOSFT's. The device is low-level chanel hot holes, which are subsequently removed by a low-level channel hot-electron stress. The deger of neutralization is monitored by Cgd s untill complete annihilation of trapped holes is realized. This allows the effects of oxide and interface state charges on CP characteristics to be clearly distinguished and the spatial profiles of the two charges to be seperately determined.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80281
ISSN:	07413106
DOI:	10.1109/55.650342
Appears in Collections:	Staff Publications

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