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|Title:||An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements||Authors:||Ling, C.H.
|Issue Date:||1-Dec-1997||Citation:||Ling, C.H.,Cheng, Z.Y. (1997-12-01). An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements. Applied Physics Letters 71 (22) : 3218-3220. ScholarBank@NUS Repository.||Abstract:||Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data. © 1997 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/61810||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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