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Title: | An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements | Authors: | Ling, C.H. Cheng, Z.Y. |
Issue Date: | 1-Dec-1997 | Citation: | Ling, C.H.,Cheng, Z.Y. (1997-12-01). An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements. Applied Physics Letters 71 (22) : 3218-3220. ScholarBank@NUS Repository. | Abstract: | Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data. © 1997 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/61810 | ISSN: | 00036951 |
Appears in Collections: | Staff Publications |
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