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|Title:||A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's||Authors:||Ang, D.S.
Post-stress interface trap generation
|Issue Date:||Mar-1999||Citation:||Ang, D.S., Ling, C.H. (1999-03). A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's. IEEE Electron Device Letters 20 (3) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1109/55.748912||Abstract:||A new insight into the post-stress interface trap (Nit) generation in hot-electron stressed p-MOSFET's is presented.Nit generation is suppressed for positive oxide field but enhanced for negative oxide field. This observation provides strong support for a two-carrier model, involving the recombination between trapped electrons and inversion holes. While post-stress interface instability has generally been associated with hole trapping and hydrogen transport, our results clearly show the importance of electron traps on the long term stability of the Si-SiO2 interface, and that the two-carrier model provides a consistent explanation for post-stress Nit generation in p-MOSFET's stressed under hot-electron injection.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80278||ISSN:||07413106||DOI:||10.1109/55.748912|
|Appears in Collections:||Staff Publications|
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