Please use this identifier to cite or link to this item:
|Title:||A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's|
|Authors:||Ang, D.S. |
Post-stress interface trap generation
|Citation:||Ang, D.S., Ling, C.H. (1999-03). A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's. IEEE Electron Device Letters 20 (3) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1109/55.748912|
|Abstract:||A new insight into the post-stress interface trap (Nit) generation in hot-electron stressed p-MOSFET's is presented.Nit generation is suppressed for positive oxide field but enhanced for negative oxide field. This observation provides strong support for a two-carrier model, involving the recombination between trapped electrons and inversion holes. While post-stress interface instability has generally been associated with hole trapping and hydrogen transport, our results clearly show the importance of electron traps on the long term stability of the Si-SiO2 interface, and that the two-carrier model provides a consistent explanation for post-stress Nit generation in p-MOSFET's stressed under hot-electron injection.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on Jun 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.