A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's

Abstract

A new insight into the post-stress interface trap (Nit) generation in hot-electron stressed p-MOSFET's is presented.Nit generation is suppressed for positive oxide field but enhanced for negative oxide field. This observation provides strong support for a two-carrier model, involving the recombination between trapped electrons and inversion holes. While post-stress interface instability has generally been associated with hole trapping and hydrogen transport, our results clearly show the importance of electron traps on the long term stability of the Si-SiO2 interface, and that the two-carrier model provides a consistent explanation for post-stress Nit generation in p-MOSFET's stressed under hot-electron injection.