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|Title:||A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K||Authors:||Ling, C.H.
|Keywords:||Impact ionization rate
|Issue Date:||1999||Citation:||Ling, C.H., See, L.K. (1999). A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K. IEEE Transactions on Electron Devices 46 (1) : 263-266. ScholarBank@NUS Repository. https://doi.org/10.1109/16.737470||Abstract:||The nonstationary effects of electrons at 77 K, in the highfield saturation region of the MOSFET, are modeled by incorporating an appropriate electron temperature decrease (-ATe) to the carrier energy, within the framework of a modified lucky electron model. For a thin oxide MOSFET (Tox = 5 nm, Lg = 0.5 μm), ATe is a function of the electric field in the saturation region, and increases rapidly with drain bias. However, for a thick oxide MOSFET (Tox = 12.5 nm, Lg = 5 μm), ATe = 280 K is found to adequately describe the impact ionization rate. Our model also explains the crossover of the ionization rates in the thick oxide MOSFET at 77 K and 300 K. © 1999 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/80275||ISSN:||00189383||DOI:||10.1109/16.737470|
|Appears in Collections:||Staff Publications|
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