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|Title:||Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's||Authors:||Ling, C.H.||Issue Date:||1997||Citation:||Ling, C.H. (1997). Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's. IEEE Transactions on Electron Devices 44 (12) : 2309-2311. ScholarBank@NUS Repository. https://doi.org/10.1109/16.644662||Abstract:||A linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated. © 1997 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/80326||ISSN:||00189383||DOI:||10.1109/16.644662|
|Appears in Collections:||Staff Publications|
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