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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1996 TO 1999]
Type:  Article

Results 1-20 of 20 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11998A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETsAng, D.S. ; Ling, C.H. 
215-May-1998A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiationCheng, Z.Y. ; Ling, C.H. 
31999A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 KLing, C.H. ; See, L.K.
4Jun-1997A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurementAng, D.S. ; Ling, C.H. 
5Mar-1999A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET'sAng, D.S. ; Ling, C.H. 
6Jan-1998A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sAng, D.S. ; Ling, C.H. 
71998A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET'sAng, D.S. ; Ling, C.H. 
81-Dec-1997An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurementsLing, C.H. ; Cheng, Z.Y. 
91998Charge trapping in interpoly ONO filmLira, K.S.; Ling, C.H. 
101997Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET'sLing, C.H. 
11May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
121-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
131996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
1415-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
151997Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping currentLing, C.H. ; Goh, Y.H.; Ooi, J.A.
16Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
171999Teaching semiconductor device physics with two-dimensional numerical solverYeow, Y.T.; Ling, C.H. 
18Mar-1997The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitorsLing, C.H. ; Ang, D.S. ; Ooi, J.A.
191999The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET'sAng, D.S. ; Ling, C.H. 
202-Jan-1997Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiationLing, C.H. ; Cheng, Z.Y.