Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81305
Title: Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation
Authors: Ling, C.H. 
Cheng, Z.Y. 
Keywords: Carrier lifetime
Chemical vapour deposition
Electron traps
Minority carriers
Silicon dioxide
Issue Date: 2-Jan-1997
Citation: Ling, C.H.,Cheng, Z.Y. (1997-01-02). Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation. Electronics Letters 33 (1) : 104-105. ScholarBank@NUS Repository.
Abstract: Charge generation in CVD SiO2 on Si substrate, subjected to 253.7nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO2 traps.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81305
ISSN: 00135194
Appears in Collections:Staff Publications

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