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| Title: | Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation | Authors: | Ling, C.H. Cheng, Z.Y. |
Keywords: | Carrier lifetime Chemical vapour deposition Electron traps Minority carriers Silicon dioxide |
Issue Date: | 2-Jan-1997 | Citation: | Ling, C.H.,Cheng, Z.Y. (1997-01-02). Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation. Electronics Letters 33 (1) : 104-105. ScholarBank@NUS Repository. | Abstract: | Charge generation in CVD SiO2 on Si substrate, subjected to 253.7nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO2 traps. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81305 | ISSN: | 00135194 |
| Appears in Collections: | Staff Publications |
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