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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Type:  Article

Results 1-20 of 137 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Mar-1998A high resolution beam scanning system for deep ion beam lithographySanchez, J.L.; Van Kan, J.A. ; Osipowicz, T. ; Springham, S.V.; Watt, F. 
2Jul-2004A Monte Carlo simulation study of channelling and dechannelling enhancement due to lattice translationsRana, M.A.; Breese, M.B.H. ; Osipowicz, T. 
3Jul-1997A PIXE micro-tomography experiment using MLEM algorithmNg, Y.K.; Orlic, I. ; Liew, S.C. ; Loh, K.K. ; Tang, S.M. ; Osipowicz, T. ; Watt, F. 
413-Oct-2003A study of the material loss and other processes involved during annealing of GaN at growth temperaturesRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Chua, S.J. 
5Sep-2001Analysis of high-power devices using proton beam induced charge microscopyZmeck, M.; Phang, J. ; Bettiol, A. ; Osipowicz, T. ; Watt, F. ; Balk, L.; Niedernostheide, F.-J.; Schulze, H.-J.; Falck, E.; Barthelmess, R.
62000Analysis of high-power devices using proton beam induced currentsZmeck, M.; Osipowicz, T. ; Watt, F. ; Niedernostheide, F.; Schulze, H.-J.; Fiege, G.B.M.; Balk, L.
7Feb-2004Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometryMangelinck, D.; Lee, P.S.; Osipowitcz, T. ; Pey, K.L.
815-Jun-2009Angular and lateral spreading of ion beams in biomedical nuclear microscopyWhitlow, H.J.; Ren, M. ; van Kan, J.A. ; Osipowicz, T. ; Watt, F. 
92013Angular spreading measurements using MeV ion microscopesWhitlow, H.J.; Ren, M. ; Chen, X.; Osipowicz, T. ; Van Kan, J.A. ; Watt, F. 
10Sep-2004Ba0.1Sr0.9TiO3-BaTi4O 9 composite thin films with improved microwave dielectric propertiesYan, L. ; Chen, L.F. ; Tan, C.Y. ; Ong, C.K. ; Rahman, M.A.; Osipowicz, T. 
1115-May-2002Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2Maung Latt, K.; Park, H.S.; Li, S.; Rong, L. ; Osipowicz, T. ; Zhu, W.G.; Lee, Y.K.
12Jul-2007Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN filmsZhou, H.; Pan, H. ; Chan, T.K. ; Ho, C.S.; Feng, Y. ; Chua, S.-J.; Osipowicz, T. 
132-Sep-1999Channeling contrast microscopy of GaN and InGaN thin filmsOsipowicz, T. ; Chiam, S.Y. ; Watt, F. ; Li, G.; Chua, S.J.
1415-Jun-2009Characterisation of beam focus quality in biomedical nuclear microscopy: A Fourier optics approachWhitlow, H.J.; Ren, M. ; van Kan, J.A. ; Osipowicz, T. ; Watt, F. 
1518-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
16Mar-2002Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVDHuang, Q.F.; Yoon, S.F.; Rusli; Zhang, Q.; Ahn, J.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
177-Aug-2000Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2Lee, Y.K.; Maung Latt, K.; Li, S.; Osipowicz, T. ; Chiam, S.Y. 
18Mar-2009Characterization of silver selenide thin films grown on Cr-covered Si substratesMohanty, B.C.; Malar, P. ; Osipowicz, T. ; Murty, B.S.; Varma, S.; Kasiviswanathan, S.
1929-Sep-2000Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2Lee, Y.K.; Latt, K.M.; JaeHyung, K.; Osipowicz, T. ; Sher-Yi, C. ; Lee, K.
201-Dec-2001Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Sher-Yi, C. ; Osipowicz, T. ; Lee, K.; Lee, Y.K.