Analysis of high-power devices using proton beam induced charge microscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2714(01)00159-7

Title:	Analysis of high-power devices using proton beam induced charge microscopy
Authors:	Zmeck, M. Phang, J. Bettiol, A. Osipowicz, T. Watt, F. Balk, L. Niedernostheide, F.-J. Schulze, H.-J. Falck, E. Barthelmess, R.
Issue Date:	Sep-2001
Citation:	Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R. (2001-09). Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41 (9-10) : 1519-1524. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(01)00159-7
Abstract:	Ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse various types of semiconductor devices. In this paper the potential of IBIC-microscopy for the analysis of deeply buffed structures of high power devices is discussed. The advantages of the analysis of charge collection spectra taken under reverse voltages (at around 10% of the design value) are discussed. In this work a high-voltage diode with a field ring structure has been analysed using a 2 MeV proton beam applying bias voltages up to 500 V. © 2001 Elsevier Science Ltd. All rights reserved.
Source Title:	Microelectronics Reliability
URI:	http://scholarbank.nus.edu.sg/handle/10635/55082
ISSN:	00262714
DOI:	10.1016/S0026-2714(01)00159-7
Appears in Collections:	Staff Publications

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