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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2714(01)00159-7
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dc.titleAnalysis of high-power devices using proton beam induced charge microscopy
dc.contributor.authorZmeck, M.
dc.contributor.authorPhang, J.
dc.contributor.authorBettiol, A.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorWatt, F.
dc.contributor.authorBalk, L.
dc.contributor.authorNiedernostheide, F.-J.
dc.contributor.authorSchulze, H.-J.
dc.contributor.authorFalck, E.
dc.contributor.authorBarthelmess, R.
dc.date.accessioned2014-06-17T02:38:58Z
dc.date.available2014-06-17T02:38:58Z
dc.date.issued2001-09
dc.identifier.citationZmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R. (2001-09). Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41 (9-10) : 1519-1524. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(01)00159-7
dc.identifier.issn00262714
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55082
dc.description.abstractIon beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse various types of semiconductor devices. In this paper the potential of IBIC-microscopy for the analysis of deeply buffed structures of high power devices is discussed. The advantages of the analysis of charge collection spectra taken under reverse voltages (at around 10% of the design value) are discussed. In this work a high-voltage diode with a field ring structure has been analysed using a 2 MeV proton beam applying bias voltages up to 500 V. © 2001 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0026-2714(01)00159-7
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0026-2714(01)00159-7
dc.description.sourcetitleMicroelectronics Reliability
dc.description.volume41
dc.description.issue9-10
dc.description.page1519-1524
dc.description.codenMCRLA
dc.identifier.isiut000171384900042
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