Please use this identifier to cite or link to this item:
|Title:||Analysis of high-power devices using proton beam induced charge microscopy|
|Citation:||Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R. (2001-09). Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41 (9-10) : 1519-1524. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(01)00159-7|
|Abstract:||Ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse various types of semiconductor devices. In this paper the potential of IBIC-microscopy for the analysis of deeply buffed structures of high power devices is discussed. The advantages of the analysis of charge collection spectra taken under reverse voltages (at around 10% of the design value) are discussed. In this work a high-voltage diode with a field ring structure has been analysed using a 2 MeV proton beam applying bias voltages up to 500 V. © 2001 Elsevier Science Ltd. All rights reserved.|
|Source Title:||Microelectronics Reliability|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 19, 2018
WEB OF SCIENCETM
checked on Jun 11, 2018
checked on Jun 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.