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|Title:||Analysis of high-power devices using proton beam induced currents||Authors:||Zmeck, M.
|Issue Date:||2000||Citation:||Zmeck, M.,Osipowicz, T.,Watt, F.,Niedernostheide, F.,Schulze, H.-J.,Fiege, G.B.M.,Balk, L. (2000). Analysis of high-power devices using proton beam induced currents. Microelectronics Reliability 40 (8-10) : 1413-1418. ScholarBank@NUS Repository.||Abstract:||Ion beam induced charge microscopy (IBIC microscopy), a new technique which utilizes a focused beam of high energy (several MeV) protons, has been used to analyse various semiconductor structures, e.g. microelectronic circuits, radiation detectors, solar cells and CVD diamond thin films [1, 2]. Here we report the first attempt to investigate high power devices with this technique. It is demonstrated that IBIC analysis allows the characterisation of layers of different doping types located several tenths of microns below the sample surface using an ion beam energy of 2 MeV. The devices investigated are high-power light-triggered thyristors. © 2000 Elsevier Science Ltd. All rights reserved.||Source Title:||Microelectronics Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/95772||ISSN:||00262714|
|Appears in Collections:||Staff Publications|
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