Please use this identifier to cite or link to this item:
|Title:||Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry||Authors:||Mangelinck, D.
Rutherford backscattering spectrometry
|Issue Date:||Feb-2004||Citation:||Mangelinck, D., Lee, P.S., Osipowitcz, T., Pey, K.L. (2004-02). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 215 (3-4) : 495-500. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2003.08.040||Abstract:||A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. © 2003 Elsevier B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/95774||ISSN:||0168583X||DOI:||10.1016/j.nimb.2003.08.040|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 12, 2019
WEB OF SCIENCETM
checked on Jul 9, 2019
checked on Aug 17, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.