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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Type:  Article

Results 1-20 of 49 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
126-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
22015AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gatingLiu X.; Lu Y.; Yu W.; Wu J.; He J.; Tang D.; Liu Z.; Somasuntharam P. ; Zhu D.; Liu W.; Cao P.; Han S.; Chen S.; Seow Tan L. 
3Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
4Sep-2002Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorptionCheah, C.W.; Karunasiri, G.; Tan, L.S. 
515-Apr-2002Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III-V semiconductor Γ quantum wellsCheah, C.W.; Tan, L.S. ; Karunasiri, G.
62015Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivationLiu, X.; Liu, Z. ; Pannirselvam, S. ; Pan, J.; Liu, W.; Jia, F.; Lu, Y.; Liu, C.; Yu, W.; He, J.; Tan, L.S. 
72004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
82005Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealingPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Du, A.Y.
926-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
101-May-2009Effects of femtosecond laser ablation on Vitrovac 6025XTan, L.S. ; Seet, H.L. ; Hong, M.H. ; Li, X.P. 
1115-Mar-2000Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsChoi, W.K. ; Chong, N.B.; Tan, L.S. ; Han, L.J.
12Sep-2004Electrical evaluation of laser annealed junctions by Hall measurementsPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Ng, K.T.; Bhat, M.; Chan, L.
131-May-2007Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideLiu, C.; Chor, E.F. ; Tan, L.S. 
142007Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser depositionLiu, C.; Chor, E.F. ; Tan, L.S. ; Du, A.
1519-Sep-2007Field emission enhancement from patterned gallium nitride nanowiresNg, D.K.T.; Hong, M.H. ; Tan, L.S. ; Zhu, Y.W. ; Sow, C.H. 
16Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
17Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
181-Oct-2007Hybrid laser micro/nanofabrication of phase change materials with combination of chemical processingLin, Y. ; Hong, M.H. ; Chen, G.X. ; Lim, C.S. ; Tan, L.S. ; Wang, Z.B.; Shi, L.P.; Chong, T.C. 
192013Hybrid plasmonic structures: Design and fabrication by laser meansXu, L.; Luo, F.F.; Tan, L.S. ; Luo, X.G.; Hong, M.H. 
2029-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C.