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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 81-100 of 143 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
81Nov-2003Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation ProcessChan, K.T.; Chin, A.; Lin, Y.D.; Chang, C.Y.; Zhu, C.X. ; Li, M.F. ; Kwong, D.L.; McAlister, S.; Duh, D.S.; Lin, W.J.
82Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
32009Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memoryFu, J.; Singh, N.; Zhu, C. ; Lo, G.-Q.; Kwong, D.-L.
4Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
52009Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thicknessXie, R.; Phung, T.H.; He, W. ; Yu, M.; Zhu, C. 
62010Low temperature metal induced lateral crystallization of Ge using germanide forming metalsPhung, T.H.; Xie, R.; Tripathy, S.; Yu, M.; Zhu, C. 
7Apr-2010Low temperature metal-induced lateral crystallization of Si 1-xGex using silicide/germanide-forming-metalsPhung, T.H.; Xie, R.; Tripathy, S.; Yu, M.; Zhu, C. 
8Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.
92006Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communicationsDing, S.-J.; Huang, Y.-J.; Li, Y.; Zhang, D.W.; Zhu, C. ; Li, M.-F. 
10Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
11Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
12Jul-2004Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectricYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Yu, M.B.; Du, A.Y.; Kwong, D.-L.
13Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
14Dec-2011Modeling the negative quadratic VCC of SiO2 in MIM capacitorPhung, T.H.; Steinmann, P.; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
15Aug-2004N-type Schottky barrier source/drain MOSFET using Ytterbium silicideZhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
1623-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
17Jun-2006Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTeo, E.Y.H. ; Ling, Q.D. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
1815-Jul-2022Nonvolatile logic‐in‐memory computing based on solution‐processed CuI memristorBochang Li ; Wei Wei ; Li Luo; Ming Gao ; Zhi Gen Yu; Sifan Li ; Kah Wee Ang ; Chunxiang Zhu 
192-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
205-Sep-2011Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole unitsZhang, B.; Liu, Y.-L.; Chen, Y.; Neoh, K.-G. ; Li, Y.-X.; Zhu, C.-X. ; Tok, E.-S. ; Kang, E.-T.