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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 81-100 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
81Jul-2006Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reductionZhu, S. ; Li, M.F. 
822006Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectricWang, X.P.; Shen, C.; Li, M.-F. ; Yu, H.Y.; Sun, Y. ; Feng, Y.P. ; Lim, A.; Sik, H.W.; Chin, A.; Yeo, Y.C. ; Lo, P.; Kwong, D.L.
83Nov-2004Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetimeLi, M.F. ; Chen, G.; Shen, C.; Wang, X.P.; Yu, H.Y. ; Yeo, Y.-C. ; Kwong, D.L.
4Dec-2002Dynamic NBTI of p-MOS transistors and its impact on MOSFET scalingChen, G. ; Li, M.F. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
52003Dynamic NBTI of PMOS transistors and its impact on device lifetimeChen, G. ; Chuah, K.Y.; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Jin, Y.; Kwong, D.L.
6Dec-1999Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxideCho, B.J. ; Xu, Z.; Guan, H.; Li, M.F. 
710-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
820-Nov-2000Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layerXu, S.J.; Liu, W. ; Li, M.F. 
9Jul-1998Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.F. 
101-May-2003Effects of tensile strain in barrier on optical gain spectra of GalnNAs/GaASn quantum wellsFan, W.J.; Ng, S.T.; Yoon, S.F.; Li, M.F. ; Chong, T.C. 
11Sep-2001Electric passivation of interface traps at drain junction space charge region in p-MOS transistorsChen, G. ; Li, M.F. ; Jin, Y.
124-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
1320-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
14Mar-1998Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-XN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.-F. ; Fan, W.J.
151994Electronic band-structure of Mg1-xZnxSySe1-y semiconductor alloyTeo, K.L. ; Feng, Y.P. ; Li, M.F. ; Chong, T.C. 
161-Jan-1996Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxNFan, W.J.; Li, M.F. ; Chong, T.C. ; Xia, J.B.
171996Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wellsFan, W.J.; Li, M.F. ; Chong, T.C. ; Xia, J.B.
1818-Jan-2006Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wellFan, W.J.; Abiyasa, A.P.; Tan, S.T.; Yu, S.F.; Sun, X.W.; Xia, J.B.; Yeo, Y.C. ; Li, M.F. ; Chong, T.C. 
191993Empirical pseudopotential band-structure calculation for Zn 1-xCdxSySe1-y quaternary alloyFeng, Y.P. ; Teo, K.L. ; Li, M.F. ; Poon, H.C. ; Ong, C.K. ; Xia, J.B.
201999Energy dependence of interface trap density - investigated by the DCIV methodJie, B.B.; Li, M.F. ; Lo, K.F.