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|Title:||Energy dependence of interface trap density - investigated by the DCIV method||Authors:||Jie, B.B.
|Issue Date:||1999||Citation:||Jie, B.B.,Li, M.F.,Lo, K.F. (1999). Energy dependence of interface trap density - investigated by the DCIV method. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 206-209. ScholarBank@NUS Repository.||Abstract:||Based on the DC Current-Voltage (DCIV) measurements, a new method is proposed for evaluating the energy dependence of interface trap density in deep submicron MOSFET's. An emitter forward bias Veb dependent parameter NEFF(Veb) is introduced and is calculated from the magnitude of the DCIV spectrum peak. Energy dependence of interface trap density can be acquired from comparing the experimental and theoretical NEFF(Veb) curves using least squares optimization. The method is illustrated with a 0.4 μm channel length pMOSFET's subject to Fowler-Nordheim stressing.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81410|
|Appears in Collections:||Staff Publications|
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