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|Title:||Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN||Authors:||Fan, W.J.
|Issue Date:||1-Jan-1996||Citation:||Fan, W.J.,Li, M.F.,Chong, T.C.,Xia, J.B. (1996-01-01). Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN. Journal of Applied Physics 79 (1) : 188-194. ScholarBank@NUS Repository.||Abstract:||The electronic properties of wide-energy gap zinc-blende structure GaN, AlN, and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Γ and those of the conduction band at Γ and X are obtained for GaN and AlN, respectively. The energies of Γ, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. ©1996 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80396||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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