Please use this identifier to cite or link to this item:
|Title:||Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer||Authors:||Xu, S.J.
|Issue Date:||20-Nov-2000||Citation:||Xu, S.J.,Liu, W.,Li, M.F. (2000-11-20). Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer. Applied Physics Letters 77 (21) : 3376-3378. ScholarBank@NUS Repository.||Abstract:||First-order and second-order longitudinal optical (LO) phonon-assisted luminescence lines of neutral donor-bound excitons and free excitons in heteroepitaxial GaN film have been investigated in temperature range from 3.5 to 50 K. The energy spacing between the exciton resonant lines and their corresponding LO phonon replicas is found to be strong temperature dependent. Permogorov's theory on LO phonon-assisted luminescence of free excitons could be employed to explain the main experiments. It is also found that the interaction strength of the free exciton with LO phonon is stronger than that of the bound exciton with LO phonon. © 2000 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/62096||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 18, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.