Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
 
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 21-40 of 76 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
2110-Jul-2000Electrical properties of rapid thermal oxides on Si1-x-yGexCy filmsBera, L.K. ; Choi, W.K. ; Feng, W.; Yang, C.Y.; Mi, J.
22Jan-2001Evolution of hillocks during silicon etching in TMAHThong, J.T.L. ; Luo, P.; Choi, W.K. ; Tan, S.C.
232002Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Wei, F.; Yu, B.; Hau-Riege, S.P.
24Sep-2004Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectricNg, T.H.; Ho, V.; Teo, L.W.; Tay, M.S.; Koh, B.H.; Chim, W.K. ; Choi, W.K. ; Du, A.Y.; Tung, C.H.
252001Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 filmsChoi, W.K. ; Ng, V. ; Ho, Y.W.; Chen, T.B.; Ho, V.
2614-Mar-2007First-principles study of native point defects in hafnia and zirconiaZheng, J.X.; Ceder, G.; Maxisch, T.; Chim, W.K. ; Choi, W.K. 
72-Feb-2006Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealingChoi, W.K. ; Chew, H.G.; Ho, V.; Ng, V. ; Chim, W.K. ; Ho, Y.W.; Ng, S.P.
84-Apr-2005Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealingChoi, W.K. ; Ho, V.; Ng, V. ; Ho, Y.W.; Ng, S.P.; Chim, W.K. 
9Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
10Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.
112004High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Ng, T.H.; Cho, B.J. 
1220-Nov-2002ICP etching and structure study of PECVD SiC filmsShi, J. ; Choi, W.K. ; Chor, E.F. 
1320-Mar-2002ICP etching of RF sputtered and PECVD silicon carbide filmsShi, J. ; Chor, E.F. ; Choi, W.K. 
1414-Feb-2007Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrixChew, H.G.; Zheng, F.; Choi, W.K. ; Chim, W.K. ; Foo, Y.L.; Fitzgerald, E.A.
1515-Apr-2003Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanismsChim, W.K. ; Ng, T.H.; Koh, B.H.; Choi, W.K. ; Zheng, J.X.; Tung, C.H.; Du, A.Y.
161-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
1718-May-2001Investigation of Ge nanocrystal formation in SiO2-Ge-SiO2 sandwich structureChoi, W.K. ; Ng, V. ; Swee, V.S.L.; Ong, C.S.; Yu, M.B.; Rusli; Yoon, S.F.
1815-Mar-2000Investigations on the morphology of silicon surfaces anisotropically etched with TMAHThong, J.T.L. ; Bai, Y. ; Luo, P.; Choi, W.K. 
192002Length effects on the reliability of dual-damascene Cu interconnectsWei, F.; Gan, C.L.; Thompson, C.V.; Clement, J.J.; Hau-Riege, S.P.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
202002Manipulation of germanium nanocrystals in a tri-layer insulator structure of a metal-insulator-semiconductor memory deviceTeo, L.W.; Heng, C.L. ; Ho, V.; Tay, M.; Choi, W.K. ; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.