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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 21-40 of 99 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
21Apr-2003Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structureHeng, C.L.; Teo, L.W.; Ho, V.; Tay, M.S.; Lei, Y.; Choi, W.K. ; Chim, W.K. 
22Apr-2003Electrical characterization of a trilayer germanium nanocrystal memory deviceHo, V.; Tay, M.S.; Moey, C.H.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Heng, C.L.; Lei, Y.
2310-May-2006Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contactsJin, L.J.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
24Mar-2001Electrical properties of crystalline YSZ films on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
251-May-2006Electromigration resistance in a short three-contact interconnect treeChang, C.W.; Choi, Z.-S.; Thompson, C.V.; Gan, C.L.; Pey, K.L.; Choi, W.K. ; Hwang, N.
26Jan-2001Evolution of hillocks during silicon etching in TMAHThong, J.T.L. ; Luo, P.; Choi, W.K. ; Tan, S.C.
2715-Jul-2003Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L.; Choi, W.K. 
282002Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Wei, F.; Yu, B.; Hau-Riege, S.P.
292003Experimental characterization of the reliability of multi-terminal dual-damascene copper interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L.; Choi, W.K. ; Chang, C.W.; Guo, Q.
30Sep-2004Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectricNg, T.H.; Ho, V.; Teo, L.W.; Tay, M.S.; Koh, B.H.; Chim, W.K. ; Choi, W.K. ; Du, A.Y.; Tung, C.H.
31Aug-2006Fabrication of germanium nanowires by oblique angle depositionChew, H.G.; Choi, W.K. ; Chim, W.K.; Fitzgerald, E.A.
322001Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 filmsChoi, W.K. ; Ng, V. ; Ho, Y.W.; Chen, T.B.; Ho, V.
3314-Mar-2007First-principles study of native point defects in hafnia and zirconiaZheng, J.X.; Ceder, G.; Maxisch, T.; Chim, W.K. ; Choi, W.K. 
342-Feb-2006Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealingChoi, W.K. ; Chew, H.G.; Ho, V.; Ng, V. ; Chim, W.K. ; Ho, Y.W.; Ng, S.P.
352007Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Dawood, M.K.; Ow, K.Q.; Chi, D.Z.
364-Apr-2005Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealingChoi, W.K. ; Ho, V.; Ng, V. ; Ho, Y.W.; Ng, S.P.; Chim, W.K. 
37Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
38Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.
392004High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Ng, T.H.; Cho, B.J. 
4015-May-2005Highly oriented Ni(Pd)SiGe formation at 400 °cJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Tung, C.H.