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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Type:  Article
Author:  Antoniadis, D.A.

Results 1-14 of 14 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
18-Sep-2003Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrixKan, E.W.H.; Choi, W.K. ; Leoy, C.C.; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.
227-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
31-Aug-2005Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicideJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Rahman, Md.A.; Osipowicz, T. ; Tung, C.H.
415-May-2005Highly oriented Ni(Pd)SiGe formation at 400 °cJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Tung, C.H.
51-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
6Nov-2001N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVDTan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K.
718-Mar-2002Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structureChoi, W.K. ; Chim, W.K. ; Heng, C.L.; Teo, L.W.; Ho, V.; Ng, V. ; Antoniadis, D.A.; Fitzgerald, E.A.
815-Mar-2004Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?Kan, E.W.H.; Choi, W.K. ; Chim, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.
94-Nov-2002Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structureTeo, L.W.; Choi, W.K. ; Chim, W.K. ; Ho, V.; Moey, C.M.; Tay, M.S.; Heng, C.L. ; Lei, Y. ; Antoniadis, D.A.; Fitzgerald, E.A.
10Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
11Dec-2007The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2Yu, H.P.; Pey, K.L.; Choi, W.K. ; Dawood, M.K.; Chew, H.G.; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
12Sep-2004The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °CJin, L.J.; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Tung, C.H.
13Nov-2002Thermal reaction of nickel and Si0.75Ge0.25 alloyPey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Zhao, H.B.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
142006Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.; Tung, C.H.