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|Title:||Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?||Authors:||Kan, E.W.H.
|Issue Date:||15-Mar-2004||Citation:||Kan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A. (2004-03-15). Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?. Journal of Applied Physics 95 (6) : 3148-3152. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1645639||Abstract:||The thermal oxidations of polycrystalline Si 0.54Ge 0.46 films at 600°C for 30 and 50 min were discussed. It was found that a stable mixed oxide was obtained for films that were oxidized for 50 min. The fabrication of a trilayer gate structure that consisted of tunnel oxide/oxidized polycrystalline Si 0.54Ge 0.46/rf was studied. It was observed that the charge storage mechanism for the trilayer structure was closely related to the interfacial traps of the nanocrystals.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82851||ISSN:||00218979||DOI:||10.1063/1.1645639|
|Appears in Collections:||Staff Publications|
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